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IPC 7
  C30 - C30B 19/12  
C30B02100-C30B03500
 

SECTION C – CHEMISTRY; METALLURGY


C 30CRYSTAL GROWTH (separation by crystallisation in general B01D 9/00) [3]


C 30 BSINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L); APPARATUS THEREFOR [3]


21/

00Unidirectional solidification of eutectic materials  [3]

21/

02.by normal casting or gradient freezing  [3]

21/

04.by zone-melting  [3]

21/

06.by pulling from a melt  [3]


Single-crystal growth from vapours  [3]


23/

00Single-crystal growth by condensing evaporated or sublimed materials  [3]

23/

02.Epitaxial-layer growth  [3]

23/

04..Pattern deposit, e.g. by using masks  [3]

23/

06..Heating of the deposition chamber, the substrate, or the materials to be evaporated  [3]

23/

08..by condensing ionised vapours (by reactive sputtering C30B 25/06)  [3]


25/

00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth  [3]

25/

02.Epitaxial-layer growth  [3]

25/

04..Pattern deposit, e.g. by using masks  [3]

25/

06..by reactive sputtering  [3]

25/

08..Reaction chambers; Selection of materials therefor  [3]

25/

10..Heating of the reaction chamber or the substrate  [3]

25/

12..Substrate holders or susceptors  [3]

25/

14..Feed and outlet means for the gases; Modifying the flow of the reactive gases  [3]

25/

16..Controlling or regulating (controlling or regulating in general G05)  [3]

25/

18..characterised by the substrate  [3]

25/

20...the substrate being of the same materials as the epitaxial layer  [3]

25/

22..Sandwich processes  [3]



27/

00Single-crystal growth under a protective fluid  [3]

27/

02.by pulling from a melt  [3]


28/

00Production of homogeneous polycrystalline material with defined structure  [5]

28/

02.directly from the solid state  [5]

28/

04.from liquids  [5]

28/

06..by normal freezing or freezing under temperature gradient  [5]

28/

08..by zone-melting  [5]

28/

10..by pulling from a melt  [5]

28/

12.directly from the gas state  [5]

28/

14..by chemical reaction of reactive gases  [5]


29/

00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (alloys C22C) [3,5]

Note

 In groups C30B 29/02 to C30B 29/58, in the absence of an indication to the contrary, a material is classified in the last appropriate place.  [3]

29/

02.Elements  [3]

29/

04..Diamond  [3]

29/

06..Silicon  [3]

29/

08..Germanium  [3]

29/

10.Inorganic compounds or compositions  [3]

29/

12..Halides  [3]

29/

14..Phosphates  [3]

29/

16..Oxides  [3]

29/

18...Quartz  [3]

29/

20...Aluminium oxides  [3]

29/

22...Complex oxides  [3]

29/

24....with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites  [3]

29/

26....with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al  [3]

29/

28....with formula A3Me5O12, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets  [3]

29/

30....Niobates; Vanadates; Tantalates  [3]

29/

32....Titanates; Germanates; Molybdates; Tungstates  [3]

29/

34..Silicates  [3]

29/

36..Carbides  [3]

29/

38..Nitrides  [3]

29/

40..AIIIBV compounds  [3]

29/

42...Gallium arsenide  [3]

29/

44...Gallium phosphide  [3]

29/

46..Sulfur-, selenium- or tellurium-containing compounds  [3]

29/

48...AIIBVI compounds  [3]

29/

50....Cadmium sulfide  [3]

29/

52..Alloys  [3]

29/

54.Organic compounds  [3]

29/

56..Tartrates  [3]

29/

58..Macromolecular compounds  [3]

29/

60.characterised by shape  [3]

29/

62..Whiskers or needles  [3]

29/

64..Flat crystals, e.g. plates, strips, disks  [5]

29/

66..Crystals of complex geometrical shape, e.g. tubes, cylinders  [5]

29/

68..Crystals with laminate structure, e.g. "superlattices"  [5]


30/

00Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions  [5]

Note

 When classifying in this group, classification is also made in groups C30B 1/00 to C30B 28/00 according to the process of crystal growth.  [5]

30/

02.using electric fields, e.g. electrolysis  [5]

30/

04.using magnetic fields  [5]

30/

06.using mechanical vibrations  [5]

30/

08.in conditions of zero-gravity or low gravity  [5]


After-treatment of single crystals or homogeneous polycrystalline material with defined structure  [3,5]


31/

00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor  [3,5]

31/

02.by contacting with diffusion materials in the solid state  [3]

31/

04.by contacting with diffusion materials in the liquid state  [3]

31/

06.by contacting with diffusion material in the gaseous state (C30B 31/18 takes precedence)  [3]

31/

08..the diffusion materials being a compound of the elements to be diffused  [3]

31/

10..Reaction chambers; Selection of materials therefor  [3]

31/

12..Heating of the reaction chamber  [3]

31/

14..Substrate holders or susceptors  [3]

31/

16..Feed and outlet means for the gases; Modifying the flow of the gases  [3]

31/

18..Controlling or regulating (controlling or regulating in general G05)  [3]

31/

20.Doping by irradiation with electromagnetic waves or by particle radiation  [3]

31/

22..by ion-implantation  [3]


33/

00After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B 31/00 takes precedence; grinding, polishing B24; mechanical fine working of gems, jewels, crystals B28D 5/00) [3,5]

33/

02.Heat treatment (C30B 33/04, C30B 33/06 take precedence)  [5]

33/

04.using electric or magnetic fields or particle radiation  [5]

33/

06.Joining of crystals  [5]

33/

08.Etching  [5]

33/

10..in solutions or melts  [5]

33/

12..in gas atmosphere or plasma  [5]



35/

00Apparatus in general, specially adapted for the growth, production or after-treatment of single crystals or a homogeneous polycrystalline material with defined structure  [3,5]


  C30 - C30B 19/12   
 

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