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IPC 7
 
C30-C30B01912
  C30B 21/00 - C30B 35/00  

SECTION C – CHEMISTRY; METALLURGY


C 30CRYSTAL GROWTH (separation by crystallisation in general B01D 9/00) [3]


C 30 BSINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L); APPARATUS THEREFOR [3]


Notes

(1)In this subclass, the following expressions are used with the meaning indicated:

 "single crystal" includes also twin crystals and a predominantly single crystal product;  [3]

 "homogeneous polycrystalline material" means a material with crystal particles, all of which have the same chemical composition;  [5]

 "defined structure" means the structure of a material with grains which are oriented in a preferential way or have larger dimensions than normally obtained.  [5]

(2)In this subclass:

 the preparation of single crystals or a homogeneous polycrystalline material with defined structure of particular materials or shapes is classified in the group for the process as well as in group C30B 29/00;  [3]

 an apparatus specially adapted for a specific process is classified in the appropriate group for the process. Apparatus to be used in more than one kind of process is classified in group C30B 35/00.  [3]


Subclass Index

SINGLE-CRYSTAL GROWTH 

from solids or gels 

C30B 1/00, C30B 3/00, C30B 5/00 

from liquids 

C30B 7/00 to C30B 21/00, C30B 27/00 

from vapours 

C30B 23/00, C30B 25/00 

PRODUCTION OF SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE 

C30B 28/00, C30B 30/00 

SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE 

C30B 29/00 

AFTER-TREATMENT 

C30B 31/00, C30B 33/00 

APPARATUS 

C30B 35/00 



Single-crystal growth from solids or gels  [3]


1/

00Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) [3]

1/

02.by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence)  [3]

1/

04..Isothermal recrystallisation  [3]

1/

06..Recrystallisation under a temperature gradient  [3]

1/

08...Zone recrystallisation  [3]

1/

10.by solid state reactions or multi-phase diffusion  [3]

1/

12.by pressure treatment during the growth  [3]


3/

00Unidirectional demixing of eutectoid materials  [3]


5/

00Single-crystal growth from gels (under a protective fluid C30B 27/00) [3]

5/

02.with addition of doping materials  [3]


Single-crystal growth from liquids; Unidirectional solidification of eutectic materials  [3]


7/

00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) [3]

7/

02.by evaporation of the solvent  [3]

7/

04..using aqueous solvents  [3]

7/

06..using non-aqueous solvents  [3]

7/

08.by cooling of the solution  [3]

7/

10.by application of pressure, e.g. hydrothermal processes  [3]

7/

12.by electrolysis  [3]

7/

14.the crystallising materials being formed by chemical reactions in the solution  [3]


9/

00Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) [3]

9/

02.by evaporation of the molten solvent  [3]

9/

04.by cooling of the solution  [3]

9/

06..using as solvent a component of the crystal composition  [3]

9/

08..using other solvents  [3]

9/

10...Metal solvents  [3]

9/

12...Salt solvents, e.g. flux growth  [3]

9/

14.by electrolysis  [3]


11/

00Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method (C30B 13/00, C30B 15/00, C30B 17/00, C30B 19/00 take precedence; under a protective fluid C30B 27/00) [3]

11/

02.without using solvents (C30B 11/06 takes precedence)  [3]

11/

04.adding crystallising materials or reactants forming it in situ to the melt  [3]

11/

06..at least one but not all components of the crystal composition being added  [3]

11/

08..every component of the crystal composition being added during the crystallisation  [3]

11/

10...Solid or liquid components, e.g. Verneuil method  [3]

11/

12...Vaporous components, e.g. vapour-liquid-solid-growth  [3]

11/

14.characterised by the seed, e.g. its crystallographic orientation  [3]


13/

00Single-crystal growth by zone-melting; Refining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; for the growth of homogeneous polycrystalline material with defined structure C30B 28/00; zone-refining of specific materials, see the relevant subclasses for the materials) [3,5]

13/

02.Zone-melting with a solvent, e.g. travelling solvent process  [3]

13/

04.Homogenisation by zone-levelling  [3]

13/

06.the molten zone not extending over the whole cross-section  [3]

13/

08.adding crystallising materials or reactants forming it in situ to the molten zone  [3]

13/

10..with addition of doping materials  [3]

13/

12...in the gaseous or vapour state  [3]

13/

14.Crucibles or vessels  [3]

13/

16.Heating of the molten zone  [3]

13/

18..the heating element being in contact with, or immersed in, the molten zone  [3]

13/

20..by induction, e.g. hot wire technique (C30B 13/18 takes precedence; induction coils H05B 6/36)  [3]

13/

22..by irradiation or electric discharge  [3]

13/

24...using electromagnetic waves  [3]

13/

26.Stirring of the molten zone  [3]

13/

28.Controlling or regulating (controlling or regulating in general G05)  [3]

13/

30..Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal  [3]

13/

32.Mechanisms for moving either the charge or the heater  [3]

13/

34.characterised by the seed, e.g. by its crystallographic orientation  [3]


15/

00Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00) [3]

15/

02.adding crystallising materials or reactants forming it in situ to the melt  [3]

15/

04..adding doping materials, e.g. for n-p-junction  [3]

15/

06.Non-vertical pulling  [3]

15/

08.Downward pulling  [3]

15/

10.Crucibles or containers for supporting the melt  [3]

15/

12..Double crucible methods  [3]

15/

14.Heating of the melt or the crystallised materials  [3]

15/

16..by irradiation or electric discharge  [3]

15/

18..using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat  [3]

15/

20.Controlling or regulating (controlling or regulating in general G05)  [3]

15/

22..Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal  [3]

15/

24...using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B 15/34)  [3]

15/

26...using television detectors; using photo or X-ray detectors  [3]

15/

28...using weight changes of the crystal or the melt, e.g. flotation methods  [3]

15/

30.Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B 15/28)  [3]

15/

32.Seed holders, e.g. chucks  [3]

15/

34.Edge-defined film-fed crystal growth using dies or slits  [3]

15/

36.characterised by the seed, e.g. its crystallographic orientation  [3]


17/

00Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B 15/00 takes precedence) [3]


19/

00Liquid-phase epitaxial-layer growth  [3]

19/

02.using molten solvents, e.g. flux  [3]

19/

04..the solvent being a component of the crystal composition  [3]

19/

06.Reaction chambers; Boats for supporting the melt; Substrate holders  [3]

19/

08.Heating of the reaction chamber or the substrate  [3]

19/

10.Controlling or regulating (controlling or regulating in general G05)  [3]

19/

12.characterised by the substrate  [3]

   C30B 21/00 - C30B 35/00  
 

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